QM6007S Todos los transistores

 

QM6007S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QM6007S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.4 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: SOP-8
 

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QM6007S Datasheet (PDF)

 ..1. Size:349K  ubiq
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QM6007S

QM6007S P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 170m -2.5Afor most of the synchronous buck converter applications . Applications The QM6007S meet the RoHS and Green Product requirement,

 8.1. Size:349K  ubiq
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QM6007S

QM6007D P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 170m -8Afor most of the synchronous buck converter applications . Applications The QM6007D meet the RoHS and Green Product requirement,10

 8.2. Size:307K  ubiq
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QM6007S

QM6007K P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 175m -2.2Afor most of the small power switching and load switch applications. Applications The QM6007K meet the RoHS and Green Product Hi

 9.1. Size:342K  ubiq
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QM6007S

QM6008D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008D meet the RoHS and Green Product requirement , 10

Otros transistores... QM6006B , QM6006D , QM6006F , QM6006M6 , QM6006P , QM6006S , QM6007D , QM6007K , 4N60 , QM6008D , QM6008G , QM6008K , QM6008P , QM6008S , QM6008U , QM6014D , QM6014P .

History: SIE726DF | SLU5N65S

 

 
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