QM6008D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM6008D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 20.8 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 4.9 nC
Tiempo de subida (tr): 7.4 nS
Conductancia de drenaje-sustrato (Cd): 38 pF
Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET QM6008D
QM6008D Datasheet (PDF)
qm6008d.pdf
QM6008D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008D meet the RoHS and Green Product requirement , 10
qm6008s.pdf
QM6008S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3Afor most of the synchronous buck converter applications . Applications The QM6008S meet the RoHS and Green Product requirement , 100
qm6008u.pdf
QM6008U N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008U meet the RoHS and Green Product requirement , 10
qm6008g.pdf
QM6008G N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.8Afor most of the small power switching and load switch applications. Applications The QM6008G meet the RoHS and Green Product requ
qm6008k.pdf
QM6008K N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.3Afor most of the small power switching and load switch applications. Applications The QM6008K meet the RoHS and Green Product requ
qm6008p.pdf
QM6008P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 14Afor most of the synchronous buck converter applications . Applications The QM6008P meet the RoHS and Green Product requirement , 10
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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