QM6015B Todos los transistores

 

QM6015B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QM6015B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23.6 nS
   Cossⓘ - Capacitancia de salida: 224 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263
 

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QM6015B Datasheet (PDF)

 ..1. Size:196K  ubiq
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QM6015B

QM6015B P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015B is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -45Afor most of the synchronous buck converter applications . Applications The QM6015B meet the RoHS and Green Product requirement ,

 8.1. Size:318K  ubiq
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QM6015B

QM6015S P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -11Afor most of the synchronous buck converter applications . Applications The QM6015S meet the RoHS and Green Product requirement ,

 8.2. Size:318K  ubiq
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QM6015B

QM6015D P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -35Afor most of the synchronous buck converter applications . Applications The QM6015D meet the RoHS and Green Product requirement ,

 8.3. Size:1464K  cn vbsemi
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QM6015B

QM6015Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

Otros transistores... QM6008G , QM6008K , QM6008P , QM6008S , QM6008U , QM6014D , QM6014P , QM6014S , IRF1407 , QM6015D , QM6015S , QM6016D , QM6016F , QM6016P , QM6016S , QM6020AP , QM6020P .

History: KI2304DS | HSU80N03

 

 
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