QM6015D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: QM6015D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23.6 nS
   Cossⓘ - Capacitancia de salida: 224 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET QM6015D

QM6015D Datasheet (PDF)

..1. Size:318K ubiq
qm6015d.pdf

QM6015D P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -35Afor most of the synchronous buck converter applications . Applications The QM6015D meet the RoHS and Green Product requirement ,

8.1. Size:318K ubiq
qm6015s.pdf

QM6015S P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -11Afor most of the synchronous buck converter applications . Applications The QM6015S meet the RoHS and Green Product requirement ,

8.2. Size:196K ubiq
qm6015b.pdf

QM6015B P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6015B is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 25m -45Afor most of the synchronous buck converter applications . Applications The QM6015B meet the RoHS and Green Product requirement ,

8.3. Size:1464K cn vbsemi
qm6015s.pdf

QM6015Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PA010BV

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