RFM12P08 Datasheet. Equivalente

 ..1. Size:680K  general electric
 rfm12p08 rfm12p10.pdf

RFM12P08

 9.1. Size:175K  toshiba
 rfm12u7x.pdf

RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in t

 9.2. Size:267K  fairchild semi
 irfm120atf.pdf

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.3. Size:269K  fairchild semi
 irfm120a.pdf

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.4. Size:95K  njs
 rfm12n08l rfm12n10l rfp12n08l.pdf

 9.5. Size:94K  njs
 rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf

 9.6. Size:68K  njs
 rfm12n18 rfm12n20 rfp12n18 rfp12n20.pdf

 9.7. Size:965K  samsung
 irfm120a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.8. Size:414K  onsemi
 irfm120a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:813K  cn vbsemi
 irfm120a.pdf

IRFM120A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABS