RFP12N08L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP12N08L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-220AB

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RFP12N08L datasheet

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RFP12N08L

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RFP12N08L

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RFP12N08L

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

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RFP12N08L

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

MOSTRAR MÁS

Otros transistores... RFM25N06, RFM5P12, RFM5P15, RFM8P08, RFM8P10, RFP10N12, RFP10N15, RFP12N08, AON7410, RFP12N10, RFP12N18, RFP12N20, RFP15N12, RFP15N15, RFP2N08, RFP2N10, RFP5P12