RFP15N15 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP15N15

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-220AB

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RFP15N15 datasheet

 8.1. Size:208K  international rectifier
irfp15n60lpbf.pdf pdf_icon

RFP15N15

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 8.2. Size:198K  international rectifier
irfp15n60l.pdf pdf_icon

RFP15N15

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 8.3. Size:100K  fairchild semi
rfp15n05l.pdf pdf_icon

RFP15N15

RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level N- Features Channel Power MOSFETs 15A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140 power field effect transistors designed for applications such Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor drivers, relay drivers and drivers for hi

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