RFP15N15 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP15N15
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 750 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de RFP15N15 MOSFET
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RFP15N15 datasheet
irfp15n60lpbf.pdf
PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.
irfp15n60l.pdf
PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c
rfp15n05l.pdf
RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level N- Features Channel Power MOSFETs 15A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140 power field effect transistors designed for applications such Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor drivers, relay drivers and drivers for hi
Otros transistores... RFP10N12, RFP10N15, RFP12N08, RFP12N08L, RFP12N10, RFP12N18, RFP12N20, RFP15N12, AON6380, RFP2N08, RFP2N10, RFP5P12, RFP5P15, RFP8P08, RHK003N06FRA, RHK003N06T146, RHK005N03FRA
History: KNP3204A | PJU3NA80
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