RFP8P08 Todos los transistores

 

RFP8P08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFP8P08
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de RFP8P08 MOSFET

   - Selección ⓘ de transistores por parámetros

 

RFP8P08 Datasheet (PDF)

 ..1. Size:279K  harris semi
rfm8p08 rfm8p10 rfp8p08.pdf pdf_icon

RFP8P08

 8.1. Size:134K  fairchild semi
rfd8p06e-sm rfp8p06e.pdf pdf_icon

RFP8P08

RFD8P06E, RFD8P06ESM, RFP8P06EData Sheet January 20028A, 60V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 8.2. Size:57K  intersil
rfd8p05-sm rfp8p05.pdf pdf_icon

RFP8P08

RFD8P05, RFD8P05SM, RFP8P05Data Sheet July 1999 File Number 2384.28A, 50V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 50VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, UIS SOA Rating Curvewhich uses feature sizes approaching those of LSI circuits,gives optimum utilization of silicon, resulting i

 8.3. Size:106K  intersil
rfd8p06le-sm rfp8p06le.pdf pdf_icon

RFP8P08

RFD8P06LE, RFD8P06LESM, RFP8P06LEData Sheet July 1999 File Number 4273.18A, 60V, 0.300 Ohm, ESD Rated, Logic FeaturesLevel, P-Channel Power MOSFET 8A, 60VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, 2kV ESD Protectedwhich uses feature sizes approaching those of LSI circuits,gives optimum utilizati

Otros transistores... RFP12N18 , RFP12N20 , RFP15N12 , RFP15N15 , RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 , 20N50 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA .

History: SWP058R75E7T | MMN2302 | ME50N06A-G | STU302S | AP4417GH | IXFC36N50P | GP1M018A020XG

 

 
Back to Top

 


 
.