RJK005N03FRA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK005N03FRA  📄📄 

Código: KV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V

Qgⓘ - Carga de la puerta: 2 nC

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 24 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm

Encapsulados: SMT3

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RJK005N03FRA datasheet

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 rjk005n03fra.pdf pdf_icon

RJK005N03FRA

RJK005N03 RJK005N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RJK005N03FRA RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Dr

 5.1. Size:54K  rohm
 rjk005n03.pdf pdf_icon

RJK005N03FRA

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec

 5.2. Size:52K  rohm
 rjk005n03t146.pdf pdf_icon

RJK005N03FRA

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec

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