PHX2N50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHX2N50E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Corriente continua de drenaje |Id|: 1.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Resistencia entre drenaje y fuente RDS(on): 5 Ohm
Paquete / Cubierta: SOT186A
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PHX2N50E Datasheet (PDF)
phx2n50e.pdf
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Philips Semiconductors Product specification PowerMOS transistors PHX2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 1.4 Ag Isolated packageRDS(ON) 5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan
phx2n60e 3.pdf
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Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 Ag Isolated packageRDS(ON) 6 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan
phx2n40e 1.pdf
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Philips Semiconductors Objective specification PowerMOS transistor PHX2N40E Isolated version of PHP4N40EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.4 Ablocking volt
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