PHX2N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX2N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: SOT186A

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PHX2N50E datasheet

 ..1. Size:85K  philips
 phx2n50e.pdf pdf_icon

PHX2N50E

Philips Semiconductors Product specification PowerMOS transistors PHX2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 1.4 A g Isolated package RDS(ON) 5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

 9.1. Size:64K  philips
 phx2n60e 3.pdf pdf_icon

PHX2N50E

Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 A g Isolated package RDS(ON) 6 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

 9.2. Size:24K  philips
 phx2n40e 1.pdf pdf_icon

PHX2N50E

Philips Semiconductors Objective specification PowerMOS transistor PHX2N40E Isolated version of PHP4N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.4 A blocking volt

Otros transistores... PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, 50N06, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E