RJK0371DSP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:86K renesas
rjk0371dsp.pdf pdf_icon

RJK0371DSP Silicon N Channel Power MOS FET Power Switching REJ03G1663-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1, 2

8.1. Size:82K renesas
rej03g1826 rjk0379dpads.pdf pdf_icon

Preliminary Datasheet RJK0379DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1826-0210 Power Switching Rev.2.10 May 13, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.1. Size:125K renesas
rej03g1644 rjk0348dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.2. Size:106K renesas
rej03g1928 rjk03e4dpads.pdf pdf_icon

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

9.3. Size:113K renesas
rjk0323jpd.pdf pdf_icon

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 4 D 1

9.4. Size:132K renesas
rej03g1352 rjk0304dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.5. Size:127K renesas
rej03g1353 rjk0305dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.6. Size:125K renesas
rej03g1937 rjk0364dpa02ds.pdf pdf_icon

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

9.7. Size:127K renesas
rej03g1721 rjk0351dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.8. Size:132K renesas
rej03g1341 rjk0303dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.9. Size:88K renesas
rej03g1661 rjk0354dspds.pdf pdf_icon

Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D

9.10. Size:95K renesas
rej03g1643 rjk0348dpads.pdf pdf_icon

Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.11. Size:86K renesas
rjk0369dsp.pdf pdf_icon

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1,

9.12. Size:91K renesas
rej03g1919 rjk03f9dnsds.pdf pdf_icon

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.13. Size:126K renesas
rej03g1650 rjk0355dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.14. Size:181K renesas
rjk03m3dpa.pdf pdf_icon

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9m max. R07DS0767EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

9.15. Size:108K renesas
rej03g1933 rjk03e9dpads.pdf pdf_icon

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.16. Size:118K renesas
rej03g1823 rjk0390dpads.pdf pdf_icon

Preliminary Datasheet RJK0390DPA REJ03G1823-0130 Silicon N Channel Power MOS FET Rev.1.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.17. Size:96K renesas
r07ds0216ej rjk03h1dpa.pdf pdf_icon

Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.0 m typ. (at VGS = 8.0 V) Pb-free Halogen-free Outline RENE

9.18. Size:125K renesas
rjk03m5dns.pdf pdf_icon

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 29, 2012 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

9.19. Size:91K renesas
rej03g1918 rjk03f8dnsds.pdf pdf_icon

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (P

9.20. Size:92K renesas
rej03g1786 rjk0395dpads.pdf pdf_icon

Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.21. Size:92K renesas
rej03g1789 rjk03b7dpads.pdf pdf_icon

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.22. Size:148K renesas
rjk03m4dpa.pdf pdf_icon

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6m max. R07DS0768EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

9.23. Size:278K renesas
rej03g1831 rjk03c2dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.24. Size:94K renesas
rej03g1646 rjk0351dpads.pdf pdf_icon

Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.25. Size:163K renesas
rej03g1722 rjk0389dpads.pdf pdf_icon

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A (Package name WPAK-D2) 2 3 4 9 D1 D1 D1 S1/D2

9.26. Size:135K renesas
rej03g1637 rjk0328dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.27. Size:125K renesas
rej03g1652 rjk0358dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.28. Size:81K renesas
rjk0329dpb-01.pdf pdf_icon

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

9.29. Size:95K renesas
rej03g1645 rjk0349dpads.pdf pdf_icon

Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.30. Size:130K renesas
rej03g1598 rjk0316dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.31. Size:118K renesas
rej03g1932 rjk03e8dpads.pdf pdf_icon

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.32. Size:92K renesas
rej03g1787 rjk0396dpads.pdf pdf_icon

Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.33. Size:92K renesas
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Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.34. Size:151K renesas
rjk03m2dpa.pdf pdf_icon

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8m max. R07DS0766EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

9.35. Size:95K renesas
rej03g1824 rjk0391dpads.pdf pdf_icon

Preliminary Datasheet RJK0391DPA REJ03G1824-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.36. Size:135K renesas
rej03g1639 rjk0330dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.37. Size:125K renesas
rej03g1938 rjk0365dpa02ds.pdf pdf_icon

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

9.38. Size:125K renesas
rjk0331dpb-00 rjk0331dpb-01.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.39. Size:138K renesas
rej03g1905 rjk03e3dnsds.pdf pdf_icon

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.40. Size:138K renesas
rej03g1902 rjk03e0dnsds.pdf pdf_icon

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.41. Size:82K renesas
r07ds0094ej rjk03a4dpa.pdf pdf_icon

Preliminary Datasheet RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0094EJ0220 (Previous REJ03G1828-0210) Power Switching Rev.2.20 Aug 26, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V) Pb-free H

9.42. Size:92K renesas
rej03g1790 rjk03b8dpads.pdf pdf_icon

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.43. Size:125K renesas
rej03g1939 rjk0366dpa02ds.pdf pdf_icon

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

9.44. Size:139K renesas
rej03g1904 rjk03e2dnsds.pdf pdf_icon

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.45. Size:94K renesas
rej03g1658 rjk0368dpads.pdf pdf_icon

Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name WP

9.46. Size:135K renesas
rej03g1641 rjk0332dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.47. Size:127K renesas
rej03g1659 rjk0349dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.48. Size:91K renesas
rej03g1916 rjk03f6dnsds.pdf pdf_icon

Datasheet RJK03F6DNS REJ03G1916-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (Package name

9.49. Size:92K renesas
rej03g1788 rjk0397dpads.pdf pdf_icon

Preliminary Datasheet RJK0397DPA REJ03G1788-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.50. Size:91K renesas
rej03g1642 rjk0346dpads.pdf pdf_icon

Preliminary Datasheet RJK0346DPA REJ03G1642-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.51. Size:84K renesas
r07ds0265ej rjk0329dpb.pdf pdf_icon

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

9.52. Size:125K renesas
rej03g1648 rjk0353dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.53. Size:92K renesas
rej03g1785 rjk0394dpads.pdf pdf_icon

Preliminary Datasheet RJK0394DPA REJ03G1785-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.54. Size:94K renesas
rej03g1651 rjk0358dpads.pdf pdf_icon

Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DC-A (Package name WPAK(2)) 5 6 7 8

9.55. Size:96K renesas
rej03g1825 rjk0392dpads.pdf pdf_icon

Preliminary Datasheet RJK0392DPA REJ03G1825-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching Jun 17, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.56. Size:117K renesas
rej03g1931 rjk03e7dpads.pdf pdf_icon

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.57. Size:124K renesas
rjk0329dpb-00.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.58. Size:127K renesas
rej03g1640 rjk0331dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.59. Size:96K renesas
rej03g1660 rjk0352dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.60. Size:125K renesas
rej03g1653 rjk0362dspds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.61. Size:108K renesas
rej03g1934 rjk03f0dpads.pdf pdf_icon

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.62. Size:93K renesas
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Preliminary Datasheet RJK03B9DPA REJ03G1791-0320 Silicon N Channel Power MOS FET Rev.3.20 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.63. Size:96K renesas
rej03g1338 rjk0301dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.64. Size:133K renesas
rjk03m1dpa.pdf pdf_icon

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3m max. R07DS0765EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 08, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

9.65. Size:140K renesas
rej03g1903 rjk03e1dnsds.pdf pdf_icon

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

9.66. Size:83K renesas
rej03g1827 rjk0380dpads.pdf pdf_icon

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev.2.20 May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE

9.67. Size:82K renesas
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Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.68. Size:105K renesas
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Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

9.69. Size:94K renesas
rej03g1647 rjk0353dpads.pdf pdf_icon

Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.70. Size:80K renesas
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Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.71. Size:93K renesas
rej03g1784 rjk0393dpads.pdf pdf_icon

Preliminary Datasheet RJK0393DPA REJ03G1784-0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching May 21, 2010 Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

9.72. Size:133K renesas
rjk03m5dpa.pdf pdf_icon

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5m max. R07DS0770EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package name

9.73. Size:278K renesas
rej03g1830 rjk03c1dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.74. Size:126K renesas
rej03g1340 rjk0302dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.75. Size:95K renesas
rej03g1930 rjk03e6dpads.pdf pdf_icon

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

9.76. Size:117K renesas
rej03g1822 rjk03c0dpads.pdf pdf_icon

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

9.77. Size:94K renesas
rej03g1649 rjk0355dpads.pdf pdf_icon

Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

9.78. Size:1174K cn vbsemi
rjk0365dpa.pdf pdf_icon

RJK0365DPA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S

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