RJK03M3DPA Todos los transistores

 

RJK03M3DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK03M3DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 335 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: WPAK
 

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RJK03M3DPA Datasheet (PDF)

 ..1. Size:181K  renesas
 rjk03m3dpa.pdf pdf_icon

RJK03M3DPA

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mmax. R07DS0767EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.1. Size:125K  renesas
 rjk03m5dns.pdf pdf_icon

RJK03M3DPA

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 29, 2012Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 8.2. Size:148K  renesas
 rjk03m4dpa.pdf pdf_icon

RJK03M3DPA

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6mmax. R07DS0768EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.3. Size:151K  renesas
 rjk03m2dpa.pdf pdf_icon

RJK03M3DPA

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

MOSTRAR MÁS

Otros transistores... RJK0329DPB-00 , RJK0329DPB-01 , RJK0331DPB-00 , RJK0331DPB-01 , RJK0369DSP , RJK0371DSP , RJK03M1DPA , RJK03M2DPA , RU6888R , RJK03M4DPA , RJK03M5DNS , RJK03M5DPA , RJK0406JPE , RJK0601DPN-E0 , RJK0602DPN-E0 , RJK0603DPN-E0 , RJK0628JPE .

History: UTC654 | SVF13N50S | IPB015N08N5 | AM30N08-80D | CS8N65F | ME4953-G

 

 
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