RJK1003DPP-E0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK1003DPP-E0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
Qgⓘ - Carga de la puerta: 59 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 660 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MOSFET RJK1003DPP-E0
RJK1003DPP-E0 Datasheet (PDF)
rjk1003dpp-e0.pdf
Preliminary Datasheet RJK1003DPP-E0 R07DS0627EJ0200N-Channel MOS FET Rev.2.00100 V, 50 A, 11 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Abs
rjk1003dpn-e0.pdf
Preliminary Datasheet RJK1003DPN-E0 R07DS0621EJ0200N-Channel MOS FET Rev.2.00100 V, 50 A, 11 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4. D
rjk1002dpp-e0.pdf
Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200N-Channel MOS FET Rev.2.00100 V, 70 A, 7.6 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Ab
rej03g1627 rjk1008dpnds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk1008dpp-e0.pdf
Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100N-Channel Power MOSFET Rev.1.00Jun 08, 2012High-Speed Switching Use Features VDSS : 100 V RDS(on) : 11 m (Max) ID : 80 A Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)2D1. Gate2. Drain1 G3. Source12 S33Application Motor control, Lighting control, Solenoid
rej03g1708 rjk1008dppds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk1001dpp-e0.pdf
Preliminary Datasheet RJK1001DPP-E0 R07DS0625EJ0200N-Channel MOS FET Rev.2.00100 V, 80 A, 5.5 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Ab
rej03g1629 rjk1008dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
