RJK1590DP3-A0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK1590DP3-A0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.04 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 31 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.95 Ohm
Encapsulados: SOT-223
Búsqueda de reemplazo de RJK1590DP3-A0 MOSFET
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RJK1590DP3-A0 datasheet
..1. Size:160K renesas
rjk1590dp3-a0.pdf 
Data Sheet RJK1590DP3-A0 R07DS1255EJ0100 150 V - 1 A - MOS FET Rev.1.00 Mar 30, 2015 High Speed Power Switching Features Capable of 2.5 V gate drive Low drive current Low on-resistance R = 1.5 typ. (at V = 4 V) DS (on) GS Outline RENESAS Package code PRSP0004ZB-A D (Package name SOT-223) 4 1. Gate G 2. Drain 3 3. Source 2 4. Drain 1 S Absol
9.1. Size:81K renesas
r07ds0270ej rjk1560dpp.pdf
Preliminary Datasheet RJK1560DPP-M0 R07DS0270EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Mar 07, 2011 Features Capable of 2.5 V gate drive Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL)
9.2. Size:80K renesas
rej03g1612 rjk1536dpeds.pdf
Preliminary Datasheet RJK1536DPE REJ03G1612-0300 N-Channel Power MOSFET Rev.3.00 High-Speed Switching Use Jun 30, 2010 Features VDSS 150 V RDS(on) 30 m (Max) ID 50 A Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) 2, 4 D 4 1. Gate 2. Drain 3. Source 1 G 4. Drain 1 2 3 S 3 Application Motor control, Lighting
9.3. Size:115K renesas
rej03g1783 rjk1555dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:86K renesas
rjk1576dpa.pdf
Preliminary Datasheet RJK1576DPA R07DS0855EJ0200 150V - 25A - MOS FET Rev.2.00 High Speed Power Switching Jan 10, 2013 Features Low on-resistance RDS(on) = 0.046 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PWSN0008DE-A (Package name WPAK(3F)) 5 6 7 8 D D D D 8 6 7 5 4 1, 2,
9.5. Size:133K renesas
rej03g1859 rjk1526dpjds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:101K renesas
rej03g0479 rjk1535dpj.pdf
Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline LDPAK D 4 4 4 1. Gate 2. Drain G 1 3. Source 2 1 3 4. Drain 2 3 1 RJK1535DPE 2 3 RJK1535DPF S RJK1535DPJ Absolute Maximu
9.7. Size:87K renesas
rjk1575dpa.pdf
Preliminary Datasheet RJK1575DPA R07DS0858EJ0200 150V - 25A - MOS FET Rev.2.00 High Speed Power Switching Jan 08, 2013 Features Very low on-resistance RDS(on) = 0.038 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C) Low leakage current High speed switching Outline
9.8. Size:99K renesas
rjk1535dpf rjk1535dpj.pdf
Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline LDPAK D 4 4 4 1. Gate 2. Drain G 1 3. Source 2 1 3 4. Drain 2 3 1 RJK1535DPE 2 3 RJK1535DPF S RJK1535DPJ Absolute Maximu
9.9. Size:96K renesas
rjk1525dpj.pdf
Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200 Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B RENESAS Package code PRSS0004AE-C (Package name LDPAK(L)) (Package
9.10. Size:83K renesas
rjk1525dpp-m0.pdf
Preliminary Datasheet RJK1525DPP-M0 R07DS0966EJ0100 150V - 17A - MOS FET Rev.1.00 High Speed Power Switching Nov 20, 2012 Features Low on-resistance RDS(on) = 0.089 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source
9.11. Size:118K renesas
rej03g1759 rjk1557dpads.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.12. Size:79K renesas
rej03g1594 rjk1536dpnds.pdf
Preliminary Datasheet RJK1536DPN REJ03G1594-0300 N-Channel Power MOSFET Rev.3.00 High-Speed Switching Use Jun 30, 2010 Features VDSS 150 V RDS(on) 30 m (Max) ID 50 A Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. Drain 1 2 3 S 3 Application Motor control, Solenoid cont
9.13. Size:230K renesas
rej03g1889 rjk1562djeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.14. Size:98K renesas
rej03g0623 rjk1525dpj.pdf
Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200 Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B RENESAS Package code PRSS0004AE-C (Package name LDPAK(L)) (Package
9.15. Size:86K renesas
rej03g0510 rjk1529dpk.pdf
Preliminary Datasheet RJK1529DPK REJ03G0510-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item
Otros transistores... RJK1206JPD, RJK1209JPE, RJK1525DPJ, RJK1525DPP-M0, RJK1535DPF, RJK1535DPJ, RJK1575DPA, RJK1576DPA, IRFZ44, RJK2061JPE, RJK2062JPK, RJK2075DPA, RJK2076DPA, RJK4002DJE, RJK4002DPD, RJK4034DJE, RJK4502DJE
