RJK5014DPP Todos los transistores

 ..1. Size:208K  renesas
 rjk5014dpp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.1. Size:79K  renesas
 rjk5014dpp-e0.pdf

Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source

 5.1. Size:119K  renesas
 rej03g1458 rjk5014dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:83K  renesas
 r07ds0487ej rjk5013dpe.pdf

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) )

 8.2. Size:108K  renesas
 r07ds0421ej rjk5012dpp.pdf

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source

 8.3. Size:92K  renesas
 rej03g1753 rjk5015dpmds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:119K  renesas
 rej03g1491 rjk5013dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:80K  renesas
 rjk5013dpp-e0.pdf

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source

 8.6. Size:83K  renesas
 rej03g1487 rjk5012dpeds.pdf

Preliminary Datasheet RJK5012DPE REJ03G1487-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 12, 2010 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. S

 8.7. Size:119K  renesas
 rej03g1457 rjk5018dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:82K  renesas
 rej03g1360 rjk5015dpkds.pdf

Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S