RQ1A060ZPTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQ1A060ZPTR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TSMT8

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RQ1A060ZPTR datasheet

 ..1. Size:650K  rohm
 rq1a060zptr.pdf pdf_icon

RQ1A060ZPTR

RQ1A060ZP Pch -12V -6A Power MOSFET Datasheet lOutline (8) VDSS (7) -12V TSMT8 (6) (5) RDS(on) (Max.) 23mW (1) ID -6A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) -1.5V Drive. (2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode. (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S

 5.1. Size:219K  rohm
 rq1a060zp.pdf pdf_icon

RQ1A060ZPTR

1.5V Drive Pch MOSFET RQ1A060ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 3.0 0.8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. 0.17 (1) (2) (3) (4) 3) Low voltage drive. (1.5V) 0.65 0.32 Abbreviated symbol YH Each lead has same dimensions Applications Equivalent circuit Switching (8) (7) (6) (5) Packaging specifi

 9.1. Size:226K  rohm
 rq1a070zptr.pdf pdf_icon

RQ1A060ZPTR

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C

 9.2. Size:1197K  rohm
 rq1a070ap.pdf pdf_icon

RQ1A060ZPTR

Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP Structure Dimensions (Unit mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (

MOSTRAR MÁS

Otros transistores... RK7002BM, RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, 4N60, RQ1A070ZPTR, RQ1E050RPTR, RQ3E070BN, RQ3E080BN, RQ3E080GN, RQ3E100BN, RQ3E100GN, RQ3E100MN