RQ5E025AT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RQ5E025AT
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.5 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm
Paquete / Cubierta: TSMT3
Búsqueda de reemplazo de MOSFET RQ5E025AT
RQ5E025AT Datasheet (PDF)
rq5e025at.pdf
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rq5e030aj.pdf
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rq5e040aj.pdf
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rq5e050at.pdf
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rq5e035at.pdf
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