2SK1190 Todos los transistores

 ..1. Size:33K  no
 2sk1190.pdf

2SK1190 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 22 A I 250 A V = 60V, V = 0V D DSS DS GS I 88 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (pu

 8.1. Size:41K  1
 2sk1192.pdf

2SK1192 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 40 A I 250 A V = 60V, V = 0V D DSS DS GS I 160 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D

 8.2. Size:313K  nec
 2sk1198.pdf

 8.3. Size:249K  hitachi
 2sk1199.pdf

 8.4. Size:18K  hitachi
 2sk1197.pdf

2SK1197 Silicon N-Channel enhanced MOS FET Application High frequency amplifier Features High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source 500 V Typ Between Drain from Source 1000 V Min, 1500 V Typ Wide forward transfer admittance yfs = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance

 8.5. Size:33K  no
 2sk1191.pdf

2SK1191 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 30 A I 250 A V = 60V, V = 0V D DSS DS GS I 120 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (p

 8.6. Size:200K  inchange semiconductor
 2sk1199.pdf

isc N-Channel MOSFET Transistor 2SK1199 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel

 8.7. Size:250K  inchange semiconductor
 2sk1197.pdf

isc N-Channel MOSFET Transistor 2SK1197 FEATURES Drain Current I = 0.5A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp