RSD080N06FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSD080N06FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SC-63

 Búsqueda de reemplazo de RSD080N06FRA MOSFET

- Selecciónⓘ de transistores por parámetros

 

RSD080N06FRA datasheet

 ..1. Size:1367K  rohm
 rsd080n06fra.pdf pdf_icon

RSD080N06FRA

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD080N06 RSD080N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package(CPT3). 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit

 5.1. Size:1158K  rohm
 rsd080n06.pdf pdf_icon

RSD080N06FRA

Data Sheet 4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package(CPT3). 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code T

 8.1. Size:1413K  rohm
 rsd080p05fra.pdf pdf_icon

RSD080N06FRA

Data Sheet AEC-Q101 Qualified 4V Drive Pch MOSFET RSD080P05 RSD080P05FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Pack

 8.2. Size:1210K  rohm
 rsd080p05.pdf pdf_icon

RSD080N06FRA

Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner cir

MOSTRAR MÁS

Otros transistores... RS1G260MN, RS1G300GN, RS3E075AT, RSD046P05, RSD046P05FRA, RSD050N06FRA, RSD050N06TL, RSD050N10FRA, P55NF06, RSD080P05FRA, RSD100N10FRA, RSD131P10, RSD131P10FRA, RSD140P06FRA, RSD150N06FRA, RSD160P05FRA, RSD175N10FRA