RSE002P03TL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSE002P03TL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 4 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: EMT3
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RSE002P03TL datasheet
rse002p03tl.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui
rse002p03.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui
rse002n06.pdf
2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 1.6 0.7 0.3 0.55 ( ) 3 Features ( ) ( ) 2 1 1) High speed switing. 0.2 0.2 0.15 2) Small package(EMT3). 0.5 0.5 1.0 3) Low voltage drive(2.5V drive). (1)Source (2)Gate Abbreviated symbol RK (3)Drain Application Switching Packaging specifications Inner
Otros transistores... RSD150N06FRA, RSD160P05FRA, RSD175N10FRA, RSD200N10TL, RSD201N10, RSD201N10FRA, RSD221N06, RSD221N06FRA, K3569, RSF010P03TL, RSF014N03TL, RSH065N03TB1, RSH065N06TB1, RSH070N05TB1, RSH070P05TB1, RSH090N03TB1, RSH100N03TB1
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