RSH065N06TB1 Todos los transistores

 

RSH065N06TB1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSH065N06TB1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SOP-8

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RSH065N06TB1 Datasheet (PDF)

 ..1. Size:172K  rohm
rsh065n06tb1.pdf

RSH065N06TB1
RSH065N06TB1

4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package TapingType Code TBBasi

 5.1. Size:173K  rohm
rsh065n06.pdf

RSH065N06TB1
RSH065N06TB1

4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package TapingType Code TBBasi

 6.1. Size:167K  rohm
rsh065n03tb1.pdf

RSH065N06TB1
RSH065N06TB1

4V Drive Nch MOSFET RSH065N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

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