RSQ025P03FRA Todos los transistores

 ..1. Size:961K  rohm
 rsq025p03fra.pdf

RSQ025P03FRA RSQ025P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ025P03FRA RSQ025P03 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(120m at 4.5V) 2) High Power Package.(PD=1.25W) 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage

 5.1. Size:70K  rohm
 rsq025p03tr.pdf

RSQ025P03 Transistor DC-DC Converter (-30V, -2.5A) RSQ025P03 External dimensions (Units mm) Features 1) Low On-resistance.(120m at 4.5V) 2) High Power Package.(PD=1.25W) TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(4V) Each lead has same dimensions Abbreviatedsymbol TP Applications DC-DC converter Equivalent circuit Struct

 9.1. Size:65K  rohm
 rsq020n03.pdf

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol Q

 9.2. Size:1074K  rohm
 rsq020n03fra.pdf

RSQ020N03FRA Nch 30V 2A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) VDSS 30V (5) TSMT6 (4) RDS(on) (Max.) 134mW (1) ID 2.0A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plat

 9.3. Size:63K  rohm
 rsq020n03tr.pdf

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol Q