RSQ035P03FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSQ035P03FRA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TSMT6
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RSQ035P03FRA Datasheet (PDF)
rsq035p03fra.pdf
RSQ035P03FRARSQ035P03TransistorAEC-Q101 Qualified4V Drive Pch MOS FET RSQ035P03FRARSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V)
rsq035p03.pdf
RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V) 0.160.4Each lead has same dimensionsA
rsq035p03tr.pdf
RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V) 0.160.4Each lead has same dimensionsA
rsq035n03fra.pdf
RSQ035N03FRARSQ035N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSQ035N03RSQ035N03FRA Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead
rsq035n03tr.pdf
RSQ035N03 Transistors 4V Drive Nch MOS FET RSQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1 (1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviate
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