RSR020N06TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSR020N06TL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Paquete / Cubierta: TSMT3
- Selección de transistores por parámetros
RSR020N06TL Datasheet (PDF)
rsr020n06tl.pdf

RSR020N06 Nch 60V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)170mW(1) ID2A(2) PD1.0WlFeatures lInner circuit1) Low on - resistance.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci
rsr020n06tl.pdf

RSR020N06TLwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)
rsr020n06.pdf

4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low on-resistance. (1) (2)2) Built-in G-S Protection Diode. 0.95 0.950.163) Small Surface Mount Package (TSMT3) . 1.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PZ(3) Drain Application Switching
rsr020p03 rsr020p03tl.pdf

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.73 Features ( )1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WZ Applications(3) D
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CS8N80A8D | NP88N03KUG | IRF6775MTRPBF | FTK2012 | SVS11N70FJHD2 | ME4856-G | DMTH6002LPS-13
History: CS8N80A8D | NP88N03KUG | IRF6775MTRPBF | FTK2012 | SVS11N70FJHD2 | ME4856-G | DMTH6002LPS-13



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