RSR025N03TL Todos los transistores

 

RSR025N03TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSR025N03TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TSMT3
 

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RSR025N03TL Datasheet (PDF)

 ..1. Size:63K  rohm
 rsr025n03tl.pdf pdf_icon

RSR025N03TL

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 5.1. Size:65K  rohm
 rsr025n03.pdf pdf_icon

RSR025N03TL

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 5.2. Size:926K  rohm
 rsr025n03fra.pdf pdf_icon

RSR025N03TL

RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d

 6.1. Size:1170K  rohm
 rsr025n05.pdf pdf_icon

RSR025N03TL

Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300

MOSTRAR MÁS

Otros transistores... RSR010N10FHA , RSR015P03TL , RSR020N06TL , RSR020P03 , RSR020P03TL , RSR020P05 , RSR020P05FRA , RSR025N03FRA , IRF830 , RSR025N05FRA , RSR025P03FRA , RSR025P03TL , RSR030N06TL , RSS040P03FU6TB , RSS040P03TB , RSS050P03FU6TB , RSS050P03TB .

History: IPD031N03L

 

 
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