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RSS065N06FU6TB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSS065N06FU6TB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SOP-8
 

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RSS065N06FU6TB Datasheet (PDF)

 ..1. Size:97K  rohm
rss065n06fu6tb.pdf pdf_icon

RSS065N06FU6TB

RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit(8) (7) (6) (5) (8) (7) (6) (5)Package Tapi

 5.1. Size:850K  cn vbsemi
rss065n06.pdf pdf_icon

RSS065N06FU6TB

RSS065N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL

 6.1. Size:57K  rohm
rss065n03fu6tb rss065n03tb.pdf pdf_icon

RSS065N06FU6TB

RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 External dimensions (Unit : mm) Features 1) Low on-resistance. ROHM:SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Eq

 9.1. Size:967K  rohm
rss060p05fra.pdf pdf_icon

RSS065N06FU6TB

RSS060P05FRARSS060P05TransistorAEC-Q101 Qualified4V Drive Pch MOSFETRSS060P05RSS060P05FRA Structure Dimensions (Unit : mm)Silicon P-channel SOP85.0MOSFET1.750.4(8) (5) Features1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark ApplicationsEach lead has same dimensionsPower switching , DC / DC conv

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History: AUIRF8736M2 | IPD60R1K5CE | CHM4435AZGP | 2SK2365-Z | AON6512 | NTMFS4C054N | SUM50P10-42

 

 
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