RSS070N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSS070N05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOP-8

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RSS070N05 datasheet

 ..1. Size:140K  rohm
 rss070n05.pdf pdf_icon

RSS070N05

RSS070N05 Transistor 4V Drive Nch MOS FET RSS070N05 Structure External dimensions (Unit mm) Silicon N-channel SOP8 5.0 MOS FET 1.75 0.4 (8) (5) Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). (1) (4) 0.2 1.27 1pin mark Applications Each lead has same dimensions Power switching , DC / DC converter , Inverter Packaging dim

 8.1. Size:121K  rohm
 rss070p05.pdf pdf_icon

RSS070N05

RSS070P05 Transistor 4V Drive Pch MOS FET RSS070P05 Structure External dimensions (Unit mm) Silicon P-channel SOP8 5.0 MOS FET 1.75 0.4 (8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4) 0.2 1.27 1pin mark Applications Each lead has same dimensions Power switching , DC / DC converter , Inverter Packaging

 8.2. Size:826K  cn vbsemi
 rss070p05.pdf pdf_icon

RSS070N05

RSS070P05 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1

 9.1. Size:81K  rohm
 rss075p03fu6tb rss075p03tb.pdf pdf_icon

RSS070N05

RSS075P03 Transistors Switching (-30V, -7.5A) RSS075P03 External dimensions (Unit mm) Features 1) Low On-resistance. SOP8 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0 Power switching, DC / DC converter. 0.4Min. Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq

MOSTRAR MÁS

Otros transistores... RSS040P03TB, RSS050P03FU6TB, RSS050P03TB, RSS060P05, RSS060P05FRA, RSS065N03FU6TB, RSS065N03TB, RSS065N06FU6TB, IRFB7545, RSS070P05, RSS075P03FU6TB, RSS075P03TB, RSS085N05, RSS090N03FU6TB, RSS090P03FU6TB, RSS090P03TB, RSS095N05