RT1A050ZPTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT1A050ZPTR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TSST8

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RT1A050ZPTR datasheet

 ..1. Size:214K  rohm
 rt1a050zptr.pdf pdf_icon

RT1A050ZPTR

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

 5.1. Size:214K  rohm
 rt1a050zp.pdf pdf_icon

RT1A050ZPTR

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

 9.1. Size:1126K  rohm
 rt1a045ap.pdf pdf_icon

RT1A050ZPTR

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR

 9.2. Size:218K  rohm
 rt1a040zptr.pdf pdf_icon

RT1A050ZPTR

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YE Each lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

MOSTRAR MÁS

Otros transistores... RSS125N03FU6TB, RSS125N03TB, RSS130N03FU6TB, RSS130N03TB, RSS140N03TB, RSU002P03T106, RSY200N05TL, RT1A040ZPTR, IRFB4110, RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M, RT3K22M, RT3K33M, RT3K44M