RTF010P02TL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTF010P02TL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm

Encapsulados: TUMT3

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RTF010P02TL datasheet

 ..1. Size:89K  rohm
 rtf010p02tl.pdf pdf_icon

RTF010P02TL

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

 5.1. Size:95K  rohm
 rtf010p02.pdf pdf_icon

RTF010P02TL

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol WQ (3) Drain Applications DC-DC converter Packaging specifications Equi

 9.1. Size:1118K  rohm
 rtf016n05.pdf pdf_icon

RTF010P02TL

Data Sheet 2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol PU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (piec

 9.2. Size:158K  rohm
 rtf015n03.pdf pdf_icon

RTF010P02TL

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0 0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol PP Applications (3) Drain Switching Packagi

MOSTRAR MÁS

Otros transistores... RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, IRF9540, RTF015N03TL, RTF015P02TL, RTF020P02, RTF020P02TL, RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR