RTF010P02TL Todos los transistores

 

RTF010P02TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTF010P02TL
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
   Paquete / Cubierta: TUMT3
 

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RTF010P02TL Datasheet (PDF)

 ..1. Size:89K  rohm
 rtf010p02tl.pdf pdf_icon

RTF010P02TL

RTF010P02 Transistors DC-DC Converter (-20V, -1.0A) RTF010P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

 5.1. Size:95K  rohm
 rtf010p02.pdf pdf_icon

RTF010P02TL

RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (570m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WQ(3) Drain Applications DC-DC converter Packaging specifications Equi

 9.1. Size:1118K  rohm
 rtf016n05.pdf pdf_icon

RTF010P02TL

Data Sheet2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TUMT3).Abbreviated symbol : PU ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (piec

 9.2. Size:158K  rohm
 rtf015n03.pdf pdf_icon

RTF010P02TL

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT30.85Max.2.00.30.77 Features (3)1) Low On-resistance. 0~0.12) Space saving, small surface mount package (TUMT3). (1) (2)3) Low voltage drive (2.5V drive). 0.170.65 0.651.3(1) Gate(2) SourceAbbreviated symbol : PP Applications (3) DrainSwitching Packagi

MOSTRAR MÁS

Otros transistores... RT3K33M , RT3K44M , RT3K66M , RT3U11M , RT3U22M , RT3U33M , RTE002P02TL , RTF010P02 , K3569 , RTF015N03TL , RTF015P02TL , RTF020P02 , RTF020P02TL , RTF025N03FRA , RTF025N03TL , RTL020P02FRA , RTL020P02TR .

History: VS3640DE | SSF2316E

 

 
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