RTF015P02TL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTF015P02TL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 1.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: TUMT3

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RTF015P02TL datasheet

 ..1. Size:88K  rohm
rtf015p02tl.pdf pdf_icon

RTF015P02TL

RTF015P02 Transistors DC-DC Converter (-20V, -1.5A) RTF015P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

 8.1. Size:158K  rohm
rtf015n03.pdf pdf_icon

RTF015P02TL

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0 0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol PP Applications (3) Drain Switching Packagi

 8.2. Size:157K  rohm
rtf015n03tl.pdf pdf_icon

RTF015P02TL

2.5V Drive Nch MOSFET RTF015N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 0.85Max. 2.0 0.3 0.77 Features (3) 1) Low On-resistance. 0 0.1 2) Space saving, small surface mount package (TUMT3). (1) (2) 3) Low voltage drive (2.5V drive). 0.17 0.65 0.65 1.3 (1) Gate (2) Source Abbreviated symbol PP Applications (3) Drain Switching Packagi

 9.1. Size:1118K  rohm
rtf016n05.pdf pdf_icon

RTF015P02TL

Data Sheet 2.5V Drive Nch MOSFET RTF016N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol PU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (piec

Otros transistores... RT3K66M, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, RTF010P02TL, RTF015N03TL, 2SK3878, RTF020P02, RTF020P02TL, RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR, RTL030P02TR, RTL035N03FRA