RTL035N03TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTL035N03TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm

Encapsulados: TUMT6

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RTL035N03TR datasheet

 ..1. Size:61K  rohm
 rtl035n03tr.pdf pdf_icon

RTL035N03TR

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T

 5.1. Size:919K  rohm
 rtl035n03fra.pdf pdf_icon

RTL035N03TR

RTL035N03FRA RTL035N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTL035N03FRA RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit

 5.2. Size:63K  rohm
 rtl035n03.pdf pdf_icon

RTL035N03TR

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T

 9.1. Size:77K  rohm
 rtl030p02tr.pdf pdf_icon

RTL035N03TR

RTL030P02 Transistors DC-DC Converter (-20V, -3.0A) RTL030P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT6 2.0 0.1 0.85MAX 2) High power package. 0.3+0.1 0.77 0.05 -0.05 3) High speed switching. (6) (5) (4) 4) Low voltage drive. (2.5V) 0 0.1 (1) (2) (3) (1) Drain Applications 0.65 0.65 0.17 0.05 (2) Drain 1pin mark

MOSTRAR MÁS

Otros transistores... RTF020P02, RTF020P02TL, RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR, RTL030P02TR, RTL035N03FRA, 4435, RTM002P02T2L, RTP315N10F7, RTQ020N03FRA, RTQ020N03TR, RTQ020N05TR, RTQ025P02FRA, RTQ025P02TR, RTQ030P02TR