PMBFJ211 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMBFJ211
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 0.8 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de PMBFJ211 MOSFET
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PMBFJ211 datasheet
..1. Size:100K philips
pmbfj210 pmbfj211 pmbfj212 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr
9.1. Size:32K philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low
9.2. Size:98K philips
pmbfj308.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 Low noise PIN SYMBOL DE
9.3. Size:47K philips
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
9.4. Size:31K philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int
9.5. Size:32K philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate volt
9.6. Size:67K philips
pmbfj620.pdf
PMBFJ620 Dual N-channel field-effect transistor Rev. 01 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features Two field effect tran
9.7. Size:228K philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
9.8. Size:68K philips
pmbfj308 pmbfj309 pmbfj310 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 Low noise PIN SYMBOL DE
9.9. Size:46K philips
pmbfj108 pmbfj109 pmbfj110.pdf
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
9.10. Size:223K nxp
pmbfj620.pdf
PMBFJ620 Dual N-channel field-effect transistor Rev. 3 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the A
9.11. Size:57K nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
Otros transistores... PMBF5486, PMBFJ108, PMBFJ109, PMBFJ110, PMBFJ111, PMBFJ112, PMBFJ113, PMBFJ210, IRLB4132, PMBFJ212, PMBFJ308, PMBFJ309, PMBFJ310, PN4391, PN4392, PN4393, PN4416
