RTR020N05FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR020N05FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TSMT3

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RTR020N05FRA datasheet

 ..1. Size:912K  rohm
rtr020n05fra.pdf pdf_icon

RTR020N05FRA

RTR020N05 RTR020N05FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR020N05 RTR020N05FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead h

 5.1. Size:53K  rohm
rtr020n05tl.pdf pdf_icon

RTR020N05FRA

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated

 5.2. Size:55K  rohm
rtr020n05.pdf pdf_icon

RTR020N05FRA

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated

 8.1. Size:84K  rohm
rtr020p02.pdf pdf_icon

RTR020N05FRA

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Application

Otros transistores... RTQ030P02TR, RTQ035N03FRA, RTQ035N03TR, RTQ035P02FHA, RTQ035P02TR, RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, IRFP450, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL, RTR025N03FRA, RTR025N03TL, RTR025N05FRA, RTR025N05TL