RTR020P02FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR020P02FRA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: TSMT3

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RTR020P02FRA datasheet

 ..1. Size:955K  rohm
 rtr020p02fra.pdf pdf_icon

RTR020P02FRA

RTR020P02FRA RTR020P02 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR020P02 RTR020P02FRA Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has

 5.1. Size:84K  rohm
 rtr020p02.pdf pdf_icon

RTR020P02FRA

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Application

 5.2. Size:100K  rohm
 rtr020p02tl.pdf pdf_icon

RTR020P02FRA

RTR020P02 Transistors Switching (-20V, -2.0A) RTR020P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 2.9 0.1 1.0MAX. 2) Built-in G-S Protection Diode. 0.85 0.1 0.4+0.1 -0.05 0.7 0.1 3) Small and Surface Mount Package (TSMT3). (3) Application 0 0.1 Power switching, DC / DC converter. (1) (2) 0.95 0.95 +0.1 0.16 -0.06 1.9 0.2 Each l

 5.3. Size:906K  cn vbsemi
 rtr020p02.pdf pdf_icon

RTR020P02FRA

RTR020P02 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

MOSTRAR MÁS

Otros transistores... RTQ035P02FHA, RTQ035P02TR, RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, BS170, RTR020P02TL, RTR025N03FRA, RTR025N03TL, RTR025N05FRA, RTR025N05TL, RTR025P02, RTR025P02FRA, RTR025P02TL