RTR025N03TL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR025N03TL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: TSMT3

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RTR025N03TL datasheet

 ..1. Size:53K  rohm
rtr025n03tl.pdf pdf_icon

RTR025N03TL

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

 ..2. Size:895K  cn vbsemi
rtr025n03tl.pdf pdf_icon

RTR025N03TL

RTR025N03TL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 5.1. Size:55K  rohm
rtr025n03.pdf pdf_icon

RTR025N03TL

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

 5.2. Size:913K  rohm
rtr025n03fra.pdf pdf_icon

RTR025N03TL

RTR025N03FRA RTR025N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR025N03FRA RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead ha

Otros transistores... RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL, RTR025N03FRA, IRF1407, RTR025N05FRA, RTR025N05TL, RTR025P02, RTR025P02FRA, RTR025P02TL, RTR030N05FRA, RTR030N05TL, RTR030P02