RTR040N03FRA Todos los transistores

 

RTR040N03FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR040N03FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: TSMT3

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RTR040N03FRA datasheet

 ..1. Size:940K  rohm
 rtr040n03fra.pdf pdf_icon

RTR040N03FRA

RTR040N03FRA RTR040N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR040N03 RTR040N03FRA External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. (1) (2) 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen

 5.1. Size:77K  rohm
 rtr040n03tl.pdf pdf_icon

RTR040N03FRA

RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. (1) (2) 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol QV

 5.2. Size:80K  rohm
 rtr040n03.pdf pdf_icon

RTR040N03FRA

RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. (1) (2) 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol QV

 5.3. Size:894K  cn vbsemi
 rtr040n03tl.pdf pdf_icon

RTR040N03FRA

RTR040N03TL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

MOSTRAR MÁS

Otros transistores... RTR025P02 , RTR025P02FRA , RTR025P02TL , RTR030N05FRA , RTR030N05TL , RTR030P02 , RTR030P02FHA , RTR030P02TL , STF13NM60N , RTR040N03TL , RTU002P02T106 , RV1C001ZP , RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP .

History: ZXMHC3A01N8 | ZVP4525Z | SWF13N80K | BM2300 | 2SK1365

 

 

 

 

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