SCH1302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SCH1302
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
Paquete / Cubierta: SCH6
- Selección de transistores por parámetros
SCH1302 Datasheet (PDF)
sch1302.pdf

Ordering number : ENN7532SCH1302P-Channel Silicon MOSFETSCH1302Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2221 1.8V drive.[SCH1302]Top View Side View1.60.20.156 5 41 2 31 : Drain0.52 : DrainBottom View3 : GateSide View4 : Source5 : Drain6 : DrainSANYO : SCH6
sch1301.pdf

Ordering number : ENN8099A SCH1301P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1301ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 8 VDrain Current (DC) ID --2.4
sch1343.pdf

SCH1343Ordering number : ENA1994SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1343ApplicationsFeatures ON-resistance RDS(on)1=55m (typ.) 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage
sch1330.pdf

SCH1330Ordering number : ENA1460ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1330ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE0250D | IPI80CN10NG | WSF20P03
History: NCE0250D | IPI80CN10NG | WSF20P03



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