PN4391 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PN4391
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: TO92

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PN4391 Datasheet (PDF)

..1. Size:32K philips
pn4391 pn4392 pn4393 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPN4391 to 4393N-channel silicon field-effecttransistorsApril 1989Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors PN4391 to 4393DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapplic

..2. Size:708K fairchild semi
pn4391 pn4392 pn4393 mmbf4391 mmbf4392 mmbf4393.pdf

PN4391 MMBF4391PN4392 MMBF4392PN4393 MMBF4393GSG TO-92SSOT-23 DDMark: 6J / 6K / 6GNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted

..3. Size:59K vishay
2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393.pdf

2N/PN/SST4391 SeriesVishay SiliconixN-Channel JFETs2N4391 PN4391 SST43912N4392 PN4392 SST43922N4393 PN4393 SST4393PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N/PN/SST4391 4 to 10 30 5 42N/PN/SST4392 2 to 5 60 5 42N/PN/SST4393 0.5 to 3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4391

..4. Size:29K calogic
2n4391 2n4392 2n4393 pn4391 pn4392 pn4393 sst4391 sst4392 sst4393.pdf