RF1K49088 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RF1K49088
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: MS012AA

Búsqueda de reemplazo de MOSFET RF1K49088

RF1K49088 Datasheet (PDF)

..1. Size:232K fairchild semi
rf1k49088.pdf

RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut

6.1. Size:142K intersil
rf1k49086.pdf

RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum

7.1. Size:248K fairchild semi
rf1k49090.pdf

RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u

7.2. Size:247K intersil
rf1k49092.pdf

RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app

7.3. Size:141K intersil
rf1k49093.pdf

RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,

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