SIR882DP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIR882DP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 1210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm

Encapsulados: SO-8

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SIR882DP datasheet

 ..1. Size:184K  vishay
sir882dp.pdf pdf_icon

SIR882DP

New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested 0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested 0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

 8.1. Size:506K  vishay
sir882adp.pdf pdf_icon

SIR882DP

New Product SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V TrenchFET Power MOSFET 60 0.0094 at VGS = 7.5 V 100 % Rg and UIS Tested 100 60 19.5 nC 0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 60

 9.1. Size:507K  vishay
sir888dp.pdf pdf_icon

SIR882DP

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00325 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 25 35.5 nC 0.0040 at VGS = 4.5 V 40g 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 Low-Side Switch in Synchronous Buck

 9.2. Size:499K  vishay
sir880dp.pdf pdf_icon

SIR882DP

New Product SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested 0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

Otros transistores... SIR874DP, SIR876ADP, SIR876DP, SIR878ADP, SIR878DP, SIR880ADP, SIR880DP, SIR882ADP, IRFZ46N, SIR888DP, SIR890DP, SIR892DP, SIRA00DP, SIRA02DP, SIRA04DP, SIRA06DP, SIRA10DP