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APT1003RKLLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT1003RKLLG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220
 

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APT1003RKLLG Datasheet (PDF)

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 apt1003rkllg.pdf pdf_icon

APT1003RKLLG

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

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 apt1003rkll.pdf pdf_icon

APT1003RKLLG

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

 5.1. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003RKLLG

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

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 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RKLLG

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

MOSTRAR MÁS

Otros transistores... APT10030L2VFRG , APT10035B2FLLG , APT10035B2LLG , APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , APT1003RBLLG , APT1003RKFLLG , IRF1404 , APT1003RSFLLG , APT1003RSLLG , APT10040B2VFRG , APT10040LVFRG , APT10040LVR , APT10045B2FLLG , APT10045B2LLG , APT10045LFLLG .

History: 2N6660CSM4 | STH140N6F7 | LNF7N65D | APT1003RBFLLG | KX8N60C | SM2A04NSV | STP7NK80ZFP

 

 
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