APT1003RKLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1003RKLLG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-220

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APT1003RKLLG datasheet

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 apt1003rkllg.pdf pdf_icon

APT1003RKLLG

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

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 apt1003rkll.pdf pdf_icon

APT1003RKLLG

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

 5.1. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003RKLLG

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall

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 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RKLLG

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

MOSTRAR MÁS

Otros transistores... APT10030L2VFRG, APT10035B2FLLG, APT10035B2LLG, APT10035LFLLG, APT10035LLLG, APT1003RBFLLG, APT1003RBLLG, APT1003RKFLLG, IRF1404, APT1003RSFLLG, APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG, APT10040LVR, APT10045B2FLLG, APT10045B2LLG, APT10045LFLLG