APT1003RSLLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT1003RSLLG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 34 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 135 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: D3PAK
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APT1003RSLLG Datasheet (PDF)
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apt1003rkfllg.pdf

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apt1003rkll.pdf

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally
Otros transistores... APT10035B2LLG , APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , APT1003RBLLG , APT1003RKFLLG , APT1003RKLLG , APT1003RSFLLG , IRF640N , APT10040B2VFRG , APT10040LVFRG , APT10040LVR , APT10045B2FLLG , APT10045B2LLG , APT10045LFLLG , APT10045LLLG , APT1004RBNR .



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