RF1K49156 Todos los transistores

 ..1. Size:219K  fairchild semi
 rf1k49156.pdf

RF1K49156 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 6.3A, 30V This Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030 using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Model uses feature sizes approaching those of LSI integrated circuits, gives optim

 6.1. Size:285K  fairchild semi
 rf1k49154.pdf

RF1K49154 Data Sheet January 2002 2A, 60V, 0.130 Ohm, Dual N-Channel, Features LittleFET Power MOSFET 2A, 60V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.130 the latest manufacturing process technology. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI integrated circuits, gives optimum

 6.2. Size:267K  fairchild semi
 rf1k49157.pdf

RF1K49157 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Single N-Channel Features LittleFET Power MOSFET 6.3A, 30V This Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030 using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Model uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

 8.1. Size:232K  fairchild semi
 rf1k49223.pdf

RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel Features LittleFET Power MOSFET 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

 8.2. Size:248K  fairchild semi
 rf1k49090.pdf

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum u

 8.3. Size:261K  fairchild semi
 rf1k49221.pdf

RF1K49221 Data Sheet January 2002 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual Features N-Channel LittleFET Power MOSFET 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130 manufactured using an advanced MegaFET process. This 2kV ESD Protected process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

 8.4. Size:232K  fairchild semi
 rf1k49088.pdf

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum ut

 8.5. Size:258K  fairchild semi
 rf1k49211.pdf

RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 7A, 12V The RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives

 8.6. Size:142K  intersil
 rf1k49086.pdf

RF1K49086 Data Sheet August 1999 File Number 3986.5 3.5A, 30V, 0.06 Ohm, Dual N-Channel Features LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum

 8.7. Size:247K  intersil
 rf1k49092.pdf

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET Power 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130 (P-Channel) feature sizes app

 8.8. Size:141K  intersil
 rf1k49093.pdf

RF1K49093 Data Sheet August 1999 File Number 3969.5 2.5A, 12V, 0.130 Ohm, Logic Level, Dual Features P-Channel LittleFET Power MOSFET 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits,

 8.9. Size:223K  intersil
 rf1k49224.pdf

RF1K49224 Data Sheet August 1999 File Number 4330.1 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Features Complementary LittleFET Power 3.5A, 30V (N-Channel) MOSFET 2.5A, 30V (P-Channel) The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel) manufactured using an advanced MegaFET process. This rDS(ON) = 0.150 (P-Channel) process, which uses feature sizes approa