APT10M19SVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10M19SVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 1900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: D3PAK

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APT10M19SVFR datasheet

 ..1. Size:117K  apt
 apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf pdf_icon

APT10M19SVFR

APT10M19BVFR APT10M19SVFR 100V 75A 0.019 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SV

 4.1. Size:70K  apt
 apt10m19svr.pdf pdf_icon

APT10M19SVFR

APT10M19SVR 100V 75A 0.019 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 6.1. Size:67K  apt
 apt10m19bvr.pdf pdf_icon

APT10M19SVFR

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 6.2. Size:47K  apt
 apt10m19bvrg.pdf pdf_icon

APT10M19SVFR

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

MOSTRAR MÁS

Otros transistores... APT106N60B2C6, APT10M07JVFR, APT10M09LVFRG, APT10M11B2VFRG, APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, K4145, APT10M19SVFRG, APT11F80B, APT11F80S, APT11N80BC3G, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG, APT1201R4BFLL