APT11F80B Todos los transistores

 ..1. Size:214K  apt
 apt11f80b apt11f80s.pdf

APT11F80B APT11F80S 600V, 12A, 0.9 Max trr 210ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 ..2. Size:376K  inchange semiconductor
 apt11f80b.pdf

isc N-Channel MOSFET Transistor APT11F80B FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:39K  1
 apt11gf120brd.pdf

APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur

 9.2. Size:165K  apt
 apt11gp60k.pdf

TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA 600V (K) POWER MOS 7 IGBT (SA) TO-220 D2PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, C high voltage switching applications and has been optimized for high frequency G E switchmode power supplies. GC E L

 9.3. Size:406K  apt
 apt11gf120krg.pdf

TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fa

 9.4. Size:158K  apt
 apt11n80bc3g.pdf

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

 9.5. Size:24K  apt
 apt11gf120kr.pdf

APT11GF120KR 1200V 22A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G C Low Forward Voltage Drop High Freq. Switching to 20KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated

 9.6. Size:37K  apt
 apt11gf120brd1.pdf

APT11GF120BRD1 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C E C Low Tail Cu

 9.7. Size:157K  apt
 apt11n80bc3.pdf

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

 9.8. Size:157K  apt
 apt11n80kc3.pdf

APT11N80KC3 800V 11A 0.450 Super Junction MOSFET TO-220 COOLMOS Power Semiconductors Ultra low RDS(ON) G D S Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-220 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800

 9.9. Size:448K  apt
 apt11gf120brdq1g.pdf

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and f

 9.10. Size:166K  apt
 apt11n80kc3g.pdf

APT11N80KC3 800V 11A 0.450 Super Junction MOSFET TO-220 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg G D Avalanche Energy Rated S Extreme dv/dt Rated MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 1

 9.11. Size:204K  apt
 apt11gp60bdqb.pdf

TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss SSOA rat

 9.12. Size:376K  inchange semiconductor
 apt11n80bc3g.pdf

isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur