RF1K49221 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1K49221

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: MS012AA

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RF1K49221 datasheet

 ..1. Size:261K  fairchild semi
 rf1k49221.pdf pdf_icon

RF1K49221

RF1K49221 Data Sheet January 2002 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual Features N-Channel LittleFET Power MOSFET 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130 manufactured using an advanced MegaFET process. This 2kV ESD Protected process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

 6.1. Size:232K  fairchild semi
 rf1k49223.pdf pdf_icon

RF1K49221

RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel Features LittleFET Power MOSFET 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

 6.2. Size:223K  intersil
 rf1k49224.pdf pdf_icon

RF1K49221

RF1K49224 Data Sheet August 1999 File Number 4330.1 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Features Complementary LittleFET Power 3.5A, 30V (N-Channel) MOSFET 2.5A, 30V (P-Channel) The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel) manufactured using an advanced MegaFET process. This rDS(ON) = 0.150 (P-Channel) process, which uses feature sizes approa

 7.1. Size:258K  fairchild semi
 rf1k49211.pdf pdf_icon

RF1K49221

RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 7A, 12V The RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives

MOSTRAR MÁS

Otros transistores... RF1K49088, RF1K49090, RF1K49092, RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211, IRFP450, RF1K49223, RF1K49224, RF1S22N10SM, RF1S25N06SM, RF1S30N06LESM, RF1S30P05SM, RF1S30P06SM, RF1S40N10LESM