APT12031JFLL Todos los transistores

 

APT12031JFLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT12031JFLL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 690 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 1460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: SOT-227

 Búsqueda de reemplazo de MOSFET APT12031JFLL

 

APT12031JFLL Datasheet (PDF)

 ..1. Size:86K  apt
apt12031jfll.pdf

APT12031JFLL
APT12031JFLL

APT12031JFLL1200V 30A 0.33 R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

 5.1. Size:69K  apt
apt12031jll.pdf

APT12031JFLL
APT12031JFLL

APT12031JLL1200V 30A 0.310WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 8.1. Size:112K  apt
apt12080jvfr.pdf

APT12031JFLL
APT12031JFLL

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit

 8.2. Size:65K  apt
apt1201r2sll.pdf

APT12031JFLL
APT12031JFLL

APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc

 8.3. Size:126K  apt
apt12045l2vfrg.pdf

APT12031JFLL
APT12031JFLL

APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

 8.4. Size:69K  apt
apt12057b2llg apt12057lllg.pdf

APT12031JFLL
APT12031JFLL

APT12057B2LLAPT12057LLL1200V 22A 0.570RB2LL POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalo

 8.5. Size:144K  apt
apt1201r5bvfrg apt1201r5svfrg.pdf

APT12031JFLL
APT12031JFLL

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi

 8.6. Size:101K  apt
apt12040l2fllg.pdf

APT12031JFLL
APT12031JFLL

APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

 8.7. Size:245K  apt
apt1204r7bfllg apt1204r7sfllg.pdf

APT12031JFLL
APT12031JFLL

APT1204R7BFLLAPT1204R7SFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong

 8.8. Size:100K  apt
apt12067b2llg apt12067lllg.pdf

APT12031JFLL
APT12031JFLL

APT12067B2LLAPT12067LLL1200V 18A 0.670R B2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 8.9. Size:111K  apt
apt12080b2vfr.pdf

APT12031JFLL
APT12031JFLL

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 8.10. Size:137K  apt
apt1201r5bvfr.pdf

APT12031JFLL
APT12031JFLL

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi

 8.11. Size:69K  apt
apt12067b2ll.pdf

APT12031JFLL
APT12031JFLL

APT12067B2LLAPT12067LLL1200V 18A 0.670WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 8.12. Size:62K  apt
apt1201r6bvr.pdf

APT12031JFLL
APT12031JFLL

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.13. Size:207K  apt
apt12040jvr.pdf

APT12031JFLL
APT12031JFLL

APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 8.14. Size:103K  apt
apt12067jfll.pdf

APT12031JFLL
APT12031JFLL

APT12067JFLL1200V 17A 0.670R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"ISOTOPalong with

 8.15. Size:203K  apt
apt12080jvr.pdf

APT12031JFLL
APT12031JFLL

APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 8.16. Size:38K  apt
apt12060b2vr.pdf

APT12031JFLL
APT12031JFLL

APT12060B2VRAPT12060LVR1200V 20A 0.600WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

 8.17. Size:101K  apt
apt12067b2fllg apt12067lfllg.pdf

APT12031JFLL
APT12031JFLL

APT12067B2FLLAPT12067LFLL1200V 18A 0.670RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 8.18. Size:61K  apt
apt12080lvr.pdf

APT12031JFLL
APT12031JFLL

APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 8.19. Size:125K  apt
apt12045l2vfr.pdf

APT12031JFLL
APT12031JFLL

APT12045L2VFR1200V 28A 0.450POWER MOS VTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

 8.20. Size:165K  apt
apt12057b2fllg apt12057lfllg.pdf

APT12031JFLL
APT12031JFLL

APT12057B2FLLAPT12057LFLL1200V 22A 0.570RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 8.21. Size:69K  apt
apt1201r4bll.pdf

APT12031JFLL
APT12031JFLL

APT1201R4BLLAPT1201R4SLL1200V 9A 1.400WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switch

 8.22. Size:69K  apt
apt12057jll.pdf

APT12031JFLL
APT12031JFLL

APT12057JLL1200V 19A 0.570WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 8.23. Size:117K  apt
apt12060b2vfr.pdf

APT12031JFLL
APT12031JFLL

APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S

 8.24. Size:69K  apt
apt12057b2ll.pdf

APT12031JFLL
APT12031JFLL

APT12057B2LLAPT12057LLL1200V 22A 0.570WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 8.25. Size:77K  apt
apt12045l2vr.pdf

APT12031JFLL
APT12031JFLL

APT12045L2VR1200V 26A 0.450WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

 8.26. Size:69K  apt
apt12040jll.pdf

APT12031JFLL
APT12031JFLL

APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 8.27. Size:113K  apt
apt1201r6bvfr.pdf

APT12031JFLL
APT12031JFLL

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 8.28. Size:114K  apt
apt1201r6bvfrg apt1201r6svfrg.pdf

APT12031JFLL
APT12031JFLL

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 8.29. Size:118K  apt
apt12060b2vfrg apt12060lvfrg.pdf

APT12031JFLL
APT12031JFLL

APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S

 8.30. Size:254K  apt
apt1201r4bfll apt1201r4sfll.pdf

APT12031JFLL
APT12031JFLL

APT1201R4BFLL(G)APT1201R4SFLL(G)1200V 9A 1.50 R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

 8.31. Size:108K  apt
apt12040jfll.pdf

APT12031JFLL
APT12031JFLL

APT12040JFLL1200V 24A 0.400R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized"ISOTOPalong with e

 8.32. Size:69K  apt
apt12067jll.pdf

APT12031JFLL
APT12031JFLL

APT12067JLL1200V 17A 0.670WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 8.33. Size:242K  apt
apt1204r7kfllg.pdf

APT12031JFLL
APT12031JFLL

APT1204R7KFLL1200V 3.5A 4.700R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptio

 8.34. Size:62K  apt
apt1201r6.pdf

APT12031JFLL
APT12031JFLL

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.35. Size:159K  apt
apt1201r2bfllg apt1201r2sfllg.pdf

APT12031JFLL
APT12031JFLL

APT1201R2BFLL(G)APT1201R2SFLL(G)1200V 12A 1.25 R BFLL POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss

 8.36. Size:64K  apt
apt12040l2ll.pdf

APT12031JFLL
APT12031JFLL

APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

 8.37. Size:118K  apt
apt12080b2vfrg apt12080lvfrg.pdf

APT12031JFLL
APT12031JFLL

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 8.38. Size:63K  apt
apt1201r5bvr.pdf

APT12031JFLL
APT12031JFLL

APT1201R5BVR1200V 10A 1.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 8.39. Size:69K  apt
apt1201r2bll.pdf

APT12031JFLL
APT12031JFLL

APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc

 8.40. Size:121K  apt
apt12040jvfr.pdf

APT12031JFLL
APT12031JFLL

APT12040JVFR1200V 26A 0.400 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faste

 8.41. Size:166K  apt
apt12057jfll.pdf

APT12031JFLL
APT12031JFLL

APT12057JFLL1200V 19A 0.570R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

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