APT12060LVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT12060LVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 650 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO-264
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APT12060LVFRG Datasheet (PDF)
apt12060b2vfrg apt12060lvfrg.pdf

APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S
apt12060b2vr.pdf

APT12060B2VRAPT12060LVR1200V 20A 0.600WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt12060b2vfr.pdf

APT12060B2VFRAPT12060LVFR1200V 20A 0.600POWER MOS VT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster S
apt12067b2llg apt12067lllg.pdf

APT12067B2LLAPT12067LLL1200V 18A 0.670R B2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL
Otros transistores... APT1204R7KFLLG , APT1204R7SFLLG , APT12057B2FLLG , APT12057B2LLG , APT12057JFLL , APT12057LFLLG , APT12057LLLG , APT12060B2VFRG , 2N60 , APT12067B2FLLG , APT12067B2LLG , APT12067JFLL , APT12067LFLLG , APT12067LLLG , APT12080B2VFRG , APT12080LVFRG , APT12F60K .
History: CMD50N06B | STP11NB40 | MSU12N60T | IPA60R600CP | IPD30N03S2L-10 | 2N3822 | APT40M35JVFR
History: CMD50N06B | STP11NB40 | MSU12N60T | IPA60R600CP | IPD30N03S2L-10 | 2N3822 | APT40M35JVFR



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