APT12080B2VFRG Todos los transistores

 

APT12080B2VFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT12080B2VFRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT12080B2VFRG MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT12080B2VFRG Datasheet (PDF)

 ..1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf pdf_icon

APT12080B2VFRG

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 1.1. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080B2VFRG

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080B2VFRG

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit

 6.2. Size:203K  apt
 apt12080jvr.pdf pdf_icon

APT12080B2VFRG

APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

MOSTRAR MÁS

Otros transistores... APT12057LLLG , APT12060B2VFRG , APT12060LVFRG , APT12067B2FLLG , APT12067B2LLG , APT12067JFLL , APT12067LFLLG , APT12067LLLG , K2611 , APT12080LVFRG , APT12F60K , APT12M80B , APT12M80S , APT13F120B , APT13F120S , APT14F100B , APT14F100S .

History: SST4117 | AON7422L | TK13E25D | IXTQ60N20T | HMS11N65K | S-LN2312LT1G | PHB174NQ04LT

 

 
Back to Top

 


 
.