APT12080B2VFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT12080B2VFRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO-247

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APT12080B2VFRG datasheet

 ..1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf pdf_icon

APT12080B2VFRG

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 1.1. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080B2VFRG

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 6.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080B2VFRG

APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit

 6.2. Size:203K  apt
 apt12080jvr.pdf pdf_icon

APT12080B2VFRG

APT12080JVR 1200V 15A 0.800W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

MOSTRAR MÁS

Otros transistores... APT12057LLLG, APT12060B2VFRG, APT12060LVFRG, APT12067B2FLLG, APT12067B2LLG, APT12067JFLL, APT12067LFLLG, APT12067LLLG, 8N60, APT12080LVFRG, APT12F60K, APT12M80B, APT12M80S, APT13F120B, APT13F120S, APT14F100B, APT14F100S