RF1S25N06SM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1S25N06SM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 72 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm

Encapsulados: TO263AB

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RF1S25N06SM datasheet

 ..1. Size:106K  intersil
 rfp25n06 rf1s25n06sm.pdf pdf_icon

RF1S25N06SM

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

 5.1. Size:82K  harris semi
 rf1s25n06.pdf pdf_icon

RF1S25N06SM

RFP25N06, RF1S25N06, S E M I C O N D U C T O R RF1S25N06SM 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB 25A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve DRAIN UIS Rating Curve (FLANGE) +175oC Operating Temperature JED

 9.1. Size:364K  fairchild semi
 rfp22n10 rf1s22n10sm.pdf pdf_icon

RF1S25N06SM

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs 22A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080 the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse) sizes approaching those of LSI integrated circuits gives optimum utilization of

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