RF1S25N06SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S25N06SM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 72 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 80 nC
Resistencia entre drenaje y fuente RDS(on): 0.047 Ohm
Paquete / Cubierta: TO263AB
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RF1S25N06SM Datasheet (PDF)
rfp25n06 rf1s25n06sm.pdf
RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
rf1s25n06.pdf
RFP25N06, RF1S25N06,S E M I C O N D U C T O RRF1S25N06SM25A, 60V, Avalanche Rated N-ChannelEnhancement-Mode Power MOSFETsDecember 1995Features PackagesJEDEC TO-220AB 25A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width CurveDRAIN UIS Rating Curve (FLANGE) +175oC Operating TemperatureJED
rfp22n10 rf1s22n10sm.pdf
RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of
Otros transistores... RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 , RF1S22N10SM , MMD60R360PRH , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM .
